| PART |
Description |
Maker |
| CM1200HG-66H |
1200 A, 3300 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE
|
POWEREX INC
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| CM800E2Z-66H CM8.0E2Z-66H |
800 A, 3300 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM1200HB-66H |
HIGH POWER SWITCHING USE INSULATED TYPE 1200 A, 3300 V, N-CHANNEL IGBT
|
Mitsubishi Electric, Corp.
POWEREX[Powerex Power Semiconductors]
|
| SI2304DDS SI2304DDS-T1-GE3 |
N-Channel 30-V (D-S) MOSFET
3300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
|
Vishay Siliconix
|
| PM1200HCE330-1 |
1200 A, 3300 V, N-CHANNEL IGBT
INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| 18696 18696-04 |
OUTLINE DRAWING HUB2700-S/3300-S
OUTLINE DRAWING, HUB2700-S/3300-S
|
VICOR[Vicor Corporation]
|
| SM3338-43 |
3300-3800 MHz 20 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| C947U332MYWDBA7317 |
Ceramic, Safety, C900_Y, 3300 pF, 20%, Y5U, Lead Spacing = 7.5mm
|
Kemet Corporation
|
| QID3350001 |
Dual IGBT HVIGBT Module 500 Amperes/3300 Volts
|
Powerex Power Semicondu...
|
| PDM-81M-3.8GSQ |
3300 MHz - 4300 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.7 dB INSERTION LOSS
|
MERRIMAC INDUSTRIES INC
|
| QR3310001 |
Fast Recovery Diode Module (100 Amp/3300 Volts) 快速恢复二极管模块00 Amp/3300伏特
|
Powerex, Inc.
|
| ALS30A332NP450 |
Aluminum Electrolytic, 85C, ALS30, 3300 uF, 20%, 450 V, -40/ 85C
|
Kemet Corporation
|
